RF integrated circuit (RFIC) design using CMOS, BiCMOS, Bipolar and GaAs technologies. Transceiver design experience dates back to the first fully integrated single chip GPS radio in 1987 and since then has advanced the state of the art in CMOS, SOI and GaAs HBT RFIC design.
Multiple materials enhance front-ends
The front-ends of smartphones should not be served by a single material. Instead, to ensure sufficient performance, they should combine a GaAs-based power amplifier with a silicon-on-insulator switch and filters made from piezolelectrics
http://www.compoundsemiconductor.net/
Compound Semiconductor Magazine, Volume 21 Issue VIII November/December 2015
Read more at the original source:
http://www.publishing.ninja/V2/page/1610/106/6/1
Additional Published Material
J. Young, “Mobile Handset PA Performance, ET vs. APT & GaAs HBT vs. SOI/CMOS,” 2014 International RF SOI Workshop, Shanghai, China, Sept. 23, 2014.
J. Young, “Carrier Aggregation (CA) Quantifying Front End Loss,” IWPC Workshop, Chicago, Sept. 16, 2014.